absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 75* i d @ v gs = 12v, t c = 100c continuous drain current 75* i dm pulsed drain current ? 300 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 863 mj i ar avalanche current ? 75 a e ar repetitive avalanche energy ? 30 mj dv/dt p eak diode recovery dv/dt ? 4.4 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 3.3 (typical) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened IRHNA57064 power mosfet surface mount (smd-2) 07/24/02 www.irf.com 1 60v, n-channel * current is limited by internal wire diameter technology smd-2 product summary part number radiation level r ds(on) i d IRHNA57064 100k rads (si) 0.0056 ? 75*a irhna53064 300k rads (si) 0.0056 ? 75*a irhna54064 600k rads (si) 0.0056 ? 75*a irhna58064 1000k rads (si) 0.0065 ? 75*a features: single event effect (see) hardened ultra low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight for footnotes refer to the last page pd - 91852f
IRHNA57064 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 60 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.065 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.0056 ? v gs = 12v, i d = 75a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 45 ? ? s ( )v ds > 15v, i ds = 75a ? i dss zero gate voltage drain current ? ? 10 v ds =48v ,v gs =0v ??25 v ds = 48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 160 v gs =12v, i d = 35a q gs gate-to-source charge ? ? 55 nc v ds = 30v q gd gate-to-drain (?miller?) charge ? ? 65 t d (on) turn-on delay time ? ? 35 v dd = 30v, i d = 35a, t r rise time ? ? 125 v gs =12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 75 t f fall time ? ? 50 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 6080 ? v gs = 0v, v ds = 25v c oss output capacitance ? 2310 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 90 ? na ? ? nh ns a thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 0.42 r thj-pcb junction-to-pc board ? 1.6 ? soldered to a 2? square copper-clad board c/w measured from the center of drain pad to center of source pad source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 75* i sm pulse source current (body diode) ? ? ? 300 v sd diode forward voltage ? ? 1.3 v t j = 25c, i s = 75a, v gs = 0v ? t rr reverse recovery time ? ? 200 ns t j = 25c, i f = 35a, di/dt 100a/ s q rr reverse recovery charge ? ? 538 nc v dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page
www.irf.com 3 IRHNA57064 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter up to 600k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 60 ? 60 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 10 ? 25 a v ds =48v, v gs =0v r ds(on) static drain-to-source ? ? 0.0061 ? 0.0071 ? v gs = 12v, i d =45a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.0056 ? 0.0065 ? v gs = 12v, i d =45a on-state resistance (smd-2) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers IRHNA57064, irhna53064 and irhna54064 2. part number irhna58064 fig a. single event effect, safe operating area v sd diode forward voltage ? ? 1.3 ? 1.3 v v gs = 0v, i s = 45a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v kr 39.2 300 37.4 60 60 60 52 34 xe 63.3 300 29.2 46 46 35 25 15 au 86.6 2068 106 35 35 27 20 14 0 10 20 30 40 50 60 70 0 -5 -10 -15 -20 vgs vds kr xe au
IRHNA57064 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 1000 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 75a
www.irf.com 5 IRHNA57064 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c oss c rss c iss 0 25 50 75 100 125 150 175 200 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 45a v = 30v ds v = 48v ds 10 100 1000 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 35a pre-irradiation
IRHNA57064 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 50 100 150 200 t , case temperature ( c) i , drain current (a) c d limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v gs
www.irf.com 7 IRHNA57064 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as 25 50 75 100 125 150 0 500 1000 1500 2000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 34a 47a 75a pre-irradiation . r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v . v gs
IRHNA57064 pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 25v, starting t j = 25c, l= 0.3 mh peak i l = 75a, v gs = 12v ? i sd 45a, di/dt 196a/ s, v dd 60v, t j 150c case outline and dimensions ? smd-2 footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 07/02
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